document number: 91296 www.vishay.com s-pending-rev. a, 22-jul-08 work-in-progress 1 power mosfet irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix features ? advanced process technology ? dynamic dv/dt ? 175 c operating temperature ? fast switching ? fully avalanche rated ? drop in replacement of the irfz48/sihfz48 for linear/audio applications ? lead (pb)-free available description advanced power mosfets from vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existi ng surface mount package. the d 2 pak is suitable for high current applicatio ns because of its low internal connection resistance and can dissipate up to 2 w in a typical surface mount application. product summary v ds (v) 60 r ds(on) ( )v gs = 10 v 0.018 q g (max.) (nc) 110 q gs (nc) 29 q gd (nc) 36 configuration single n - c hannel m os fet g d s d 2 pak (to-263) g d s i 2 pak (to-262) a v aila b le rohs* compliant ordering information package d 2 pak (to-263) i 2 pak (to-262) lead (pb)-free irfz48rspbf irfz48rlpbf sihfz48rs-e3 SIHFZ48RL-E3 snpb irfz48rs - sihfz48rs - absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current e v gs at 10 v t c = 25 c i d 50 a t c = 100 c 50 pulsed drain current a, e i dm 290 linear derating factor 1.3 w/c single pulse avalanche energy b, e e as 100 mj maximum power dissipation t c = 25 c p d 190 w peak diode recovery dv/dt c, e dv/dt 4.5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) d for 10 s 300 d * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com document number: 91296 2 s-pending-rev. a, 22-jul-08 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix notes a. repetitive rating; pulse width limited by maximum junction temper ature (see fig. 11). b. v dd = 25 v, starting t j = 25 c, l = 22 h, r g = 25 , i as = 72 a (see fig. 12). c. i sd 72 a, di/dt 200 a/s, v dd v ds , t j 175 c. d. 1.6 mm from case. e. current limited by the package, (die current = 72 a). mounting torque 6-32 or m3 screw 10 lbf in 1.1 n m thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w case-to-sink, flat, greased surface r thcs 0.50 - maximum junction-to-case (drain) r thjc -0.8 absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 60 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma c -0.60-v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v - - 25 a v ds = 48 v, v gs = 0 v, t j = 150 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 43 a b - - 0.018 forward transconductance g fs v ds = 25 v, i d = 43 a b 27 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 c - 2400 - pf output capacitance c oss - 1300 - reverse transfer capacitance c rss - 190 - total gate charge q g v gs = 10 v i d = 72 a, v ds = 48 v, see fig. 6 and 13 b, c - - 110 nc gate-source charge q gs --29 gate-drain charge q gd --36 turn-on delay time t d(on) v dd = 30 v, i d = 72 a, r g = 9.1 , r d = 0.34 , see fig. 10 b, c -8.1- ns rise time t r - 250 - turn-off delay time t d(off) - 210 - fall time t f - 250 - internal drain inductance l d between lead, 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- d s g
document number: 91296 www.vishay.com s-pending-rev. a, 22-jul-08 3 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. pulse width 300 s; duty cycle 2 %. c. current limited by the package, (die current = 72 a). typical characteristics 25 c, unless otherwise noted fig. 1 - typical output characteristics fig. 2 - typical output characteristics drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol showing the integral reverse p - n junction diode --50 c a pulsed diode forward current a i sm --290 body diode voltage v sd t j = 25 c, i s = 72 a, v gs = 0 v b --2.0v body diode reverse recovery time t rr t j = 25 c, i f = 72 a, di/dt = 100 a/s b, c - 120 180 ns body diode reverse recovery charge q rr - 0.50 0.80 c forward turn-on time t on intrinsic turn-on time is negligib le (turn-on is dominated by l s and l d ) specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit s d g
www.vishay.com document number: 91296 4 s-pending-rev. a, 22-jul-08 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage -60 -40 -20 0 20 40 60 8 0 100 120 140 160 1 8 0 0.0 0.5 1.0 1.5 2.0 2.5 t , j u nction temperat u re ( c) r , drain-to-so u rce on resistance ( n ormalized) j ds(on) v = i = gs d 10 v 72a
document number: 91296 www.vishay.com s-pending-rev. a, 22-jul-08 5 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain current vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms 1 10 100 1000 0.1 1 10 100 1000 operatio n i n this area limited by r ds(on) single p u lse t t = 175 c = 25 c j c v , drain-to-so u rce v oltage ( v ) i , drain c u rrent (a) i , drain c u rrent (a) ds d 10 u s 100 u s 1ms 10ms 25 50 75 100 125 150 175 0 20 40 60 8 0 t , case temperat u re ( c) i , drain c u rrent (a) c d limited by package p u lse w idth 1 s d u ty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f
www.vishay.com document number: 91296 6 s-pending-rev. a, 22-jul-08 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix fig. 11 - maximum effective transient thermal impedance, junction-to-case fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 n otes: 1. d u ty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectang u lar p u lse d u ration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 si n gle pulse (thermal respo n se) a r g i as 0.01 t p d.u.t. l v ds + - v dd dri v er 15 v 20 v i as v ds t p 25 50 75 100 125 150 175 0 50 100 150 200 250 starting t , j u nction temperat u re ( c) e , single p u lse a v alanche energy (mj) j as i d top bottom 29a 51a 72a
document number: 91296 www.vishay.com s-pending-rev. a, 22-jul-08 7 irfz48rs, irfz48rl, sihfz48rs, sihfz48rl vishay siliconix fig. 13a - maximum avalanche energy vs. drain current fig. 13b - gate charge test circuit fig. 14 - for n-channel vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91296. q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v c u rrent reg u lator c u rrent sampling resistors same type as d.u.t. + - p. w . period di/dt diode reco v ery d v /dt ripple 5 % body diode for w ard drop re-applied v oltage re v erse reco v ery c u rrent body diode for w ard c u rrent v gs = 10 v * v dd i sd dri v er gate dri v e d.u.t. i sd w a v eform d.u.t. v ds w a v eform ind u ctor c u rrent d = p. w . period + - + + + - - - * v gs = 5 v for logic le v el de v ices peak diode recovery dv/dt test circuit v dd ? d v /dt controlled b y r g ? dri v er same type as d.u.t. ? i sd controlled b y d u ty factor "d" ? d.u.t. - de v ice u nder test d.u.t. circ u it layo u t considerations ? lo w stray ind u ctance ? gro u nd plane ? lo w leakage ind u ctance c u rrent transformer r g
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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